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SI9422DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
200
rDS(on) (W)
0.420 @ VGS = 10 V
ID (A)
"1.7
D
SO-8
S S S G 1 2 3 4 Top View S N-Channel MOSFET 8 7 6 5 D D D D G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b 150 C) Pulsed Drain Current Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IAS EAS IS PD TJ, Tstg
Limit
200 "20 "1.7 "1.3 "12 "12.5 8 2.1 2.5 1.6 -55 to 150
Unit
V
A
mJ A W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board. b. t v10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70793 S-59610--Rev. D, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State
Symbol
RthJA
Typical
Maximum
50
Unit
_C/W
80
2-1
SI9422DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 160 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 1.7 A VDS = 10 V, ID = 1.7 A IS = 2.1 A, VGS = 0 V 5 0.340 3.5 0.95 1.2 0.420 2 "100 1 25 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.1 A, di/dt = 100 A/ms VDD = 100 V, RL = 100 W V, ID ^ 1 A, VGEN = 10 V RG = 6 W A V, VDS = 100 V VGS = 10 V ID = 1.7 A V, V, 17 13 3.5 4.5 10 10 20 25 115 20 20 40 50 150 ns 25 nC C
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
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2-2
Document Number: 70793 S-59610--Rev. D, 23-Nov-98
SI9422DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
12 12
Transfer Characteristics
9 I D - Drain Current (A)
VGS = 7 thru 10 V I D - Drain Current (A) 6V
9
6
5V
6 TC = 125_C 3 25_C
3
4V 0 0 1 2 3 4 5 0 0 2 4 6
-55_C 8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.5 800
Capacitance
r DS(on) - On-Resistance ( W )
0.4
Ciss C - Capacitance (pF) VGS = 10 V 600
0.3
400
0.2
Coss 200 Crss 0
0.1
0 0 3 6 ID - Drain Current (A) 9 12
0
10
20
30
40
50
VDS - Drain-to-Source Voltage (V)
10 V GS - Gate-to-Source Voltage (V) VDS = 100 V ID = 1.7 A
Gate Charge
2.2 2.0 r DS(on) - On-Resistance ( W) (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 1.7 A
8
6
4
2
0 0 3 6 9 12
0.6 -50
-25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (_C)
Document Number: 70793 S-59610--Rev. D, 23-Nov-98
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2-3
SI9422DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20 0.50
On-Resistance vs. Gate-to-Source Voltage
10 I S - Source Current (A) TJ = 150_C
r DS(on) - On-Resistance ( W )
0.45
0.40
0.35
0.30 ID = 1.7 A 0.25
TJ = 25_C
1 0.00 0.4 0.8 1.2 1.6
0.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.4 0.2 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -50 10 Power (W) 30 ID = 250 mA 40 V GS(th) Variance (V) 50
Single Pulse Power
20
0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02
Notes: PDM t1
0.01
Single Pulse
t2 1. Duty Cycle, D =
t1 t2 2. Per Unit Base = RthJA = 80_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
0.001 10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (sec)
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Document Number: 70793 S-59610--Rev. D, 23-Nov-98

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